Design, Modelling and Analysis of a Double Junction Gaas Solar Cell using Silvaco Software

Abstract

This paper inspects the potential use of Gallium Indium Phosphide material used  as  a photovoltaic cell.A double-junction GaAS solar cell was simulated using Silvaco Atlas. Gallium Indium Phosphide material was uesd as the top junction and Gallium Arsenide was used as the bottom junction. The composition percentage of Indium phosphide and Gallium Arsenide within the Gallium Indium phosphide provides the band gap of the junctions used in the device. The results of this investigation reflects that Indium Gallium Phosphide and Gallium Arsenide are promising semiconductor for solar cell use.